Blocking grain boundaries in acceptor-doped BaZrO3 proton conductors
![Figure 1: (a) microelectrodes on large-grained Ba(Zr,Y)O3-d sample, (b) shrinking of GB semicircle in impedance spectrum of a single GB under DC bias.](/6275800/original-1518447057.jpg?t=eyJ3aWR0aCI6MjQ2LCJvYmpfaWQiOjYyNzU4MDB9--a1ae6871c12f33355fdabd10c1551c1aade44f93)
Figure 1: (a) microelectrodes on large-grained Ba(Zr,Y)O3-d sample, (b) shrinking of GB semicircle in impedance spectrum of a single GB under DC bias.
![Figure 2: (a) increase of GB conductivity upon annealing (grain size remains unchanged). (b) accumulation of acceptor dopants in GB region, measured by TEM-EDX.](/6275812/original-1518447057.jpg?t=eyJ3aWR0aCI6MjQ2LCJvYmpfaWQiOjYyNzU4MTJ9--c9e7545329476d21a7a7885659d26c6596a36ae4)
Figure 2: (a) increase of GB conductivity upon annealing (grain size remains unchanged). (b) accumulation of acceptor dopants in GB region, measured by TEM-EDX.